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| SI4800 N-channel enhancement mode field-effect transistor M3D315 Rev. 01 -- 13 July 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: SI4800 in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOSTM technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tamb = 25 C; pulsed; tp 10 s Tamb = 25 C; pulsed; tp 10 s VGS = 10 V; ID = 9 A; Tj = 25 C VGS = 4.5 V; ID = 7 A; Tj = 25 C Typ - - - - 15.5 27.5 Max 30 9 2.5 150 18.5 33 Unit V A W C m m drain-source voltage (DC) drain current total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current Tamb = 25 C; pulsed; tp 10 s Tamb = 25 C; pulsed; tp 10 s; Figure 2 and 3 Tamb = 70 C; pulsed; tp 10 s; Figure 2 Tamb = 25 C; pulsed; tp 10 s; Figure 3 Tamb = 25 C; pulsed; tp 10 s; Figure 1 Tamb = 70 C; pulsed; tp 10 s; Figure 1 Conditions Tj = 25 to 150 C Min - - - - - - - -55 -55 - Max 30 20 9 7 40 2.5 1.6 +150 +150 2.3 Unit V V A A A W W C C A Source-drain diode 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 2 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 03aa11 03aa19 120 Pder (%) 100 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 o Tamb ( C) 0 0 25 50 75 100 125 150 175 o Tamb ( C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 102 ID (A) 10 RDSon = VDS/ ID tp = 10 s 1 ms 03af84 10 ms 1 100 ms P 10-1 = tp T D.C. 10 s tp T t 10-2 10-1 1 10 VDS (V) 102 Tamb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 3 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Rth(j-a) Thermal characteristics Conditions mounted on a printed circuit board; tp 10 s; minimum footprint; Figure 4 Value Unit 50 K/W thermal resistance from junction to ambient Symbol Parameter 7.1 Transient thermal impedance 102 Zth(j-amb) = 0.5 (K/W) 0.2 10 0.1 0.05 0.02 1 03af83 P = 10-1 tp T single pulse tp T t 10-2 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Tamb = 25 C Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 4 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 A; VDS = VGS; Tj = 25 C VDS = 24 V; VGS = 0 V Tj = 25 C Tj = 55 C IGSS ID(on) RDSon gate-source leakage current On-state drain current drain-source on-state resistance VGS = 20 V; VDS = 0 V VDS 5; VGS = 10 V VGS = 10 V; ID = 9 A; Figure 7 and 8 VGS = 4.5 V; ID = 7 A; Figure 7 and 8 Dynamic characteristics gfs Qg(tot) Qgs Qgd td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 12 reverse recovery time IS = 2.3 A; dIS/dt = -100 A/s; VGS = 0 V VDD = 15 V; RD = 15 ; VGS = 10 V; RG = 6 VDS = 15 V; ID = 9 A ID = 9 A; VDD = 15 V; VGS = 5 V; Figure 13 - - - - - - - - - - 19 19 4 7.5 11 8 22 9 0.7 50 - - - - 16 15 30 15 1.2 80 S nC nC nC ns ns ns ns V ns - - - 30 - - - - - - 15.5 27.5 1 5 100 - 18.5 33 A A nA A m m 0.8 - - V Conditions Min Typ Max Unit Source-drain (reverse) diode 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 5 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 03af85 03af87 40 ID (A) 30 Tj = 25 C 10 V 5 V 4.5 V 4V 40 ID (A) 30 VDS > ID x RDSon 3.5 V 20 20 10 3V 10 Tj = 150 C 0 0 0.5 1 VGS = 2.5 V 1.5 VDS (V) 2 25 C 0 0 1 2 3 4 VGS (V) 5 Tj = 25 C Tj = 25 C and 150 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03af86 0.03 RDSon () 0.02 Tj = 25 C 4.5 V 5V a 2 03ad57 1.6 1.2 VGS = 10 V 0.8 0.01 0.4 0 0 10 20 30 ID (A) 40 0 -60 0 60 120 Tj (C) 180 Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 6 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 03aa33 2.5 VGS(th) (V) 2 max 10-1 ID (A) 10-2 03aa36 typ 1.5 10-3 min typ max 1 min 10-4 0.5 10-5 0 -60 0 60 120 Tj ( C) o 10-6 180 0 0.5 1 1.5 2 2.5 3 VGS (V) ID = 250 A; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 104 Ciss Coss Crss (pF) 103 03af89 Ciss Coss Crss 102 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 7 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 03af88 40 IS (A) 30 VGS = 0 V 03af90 10 VGS (V) 8 Tj = 25 C ID = 9 A VDD = 15 V 6 20 4 10 Tj = 25 C 150 C 2 0 0 0.4 0.8 VSD (V) 1.2 0 0 10 20 30 QG (nC) 40 Tj = 25 C and 150 C; VGS = 0 V ID = 9 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 8 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 9. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE vMA Z 8 5 Q A2 pin 1 index Lp 1 e bp 4 wM L detail X A1 (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3 0.010 0.057 0.069 0.004 0.049 0.019 0.0100 0.014 0.0075 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 0.028 0.004 0.012 8 0o o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 Fig 14. SOT96-1 (SO8). 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 9 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 10. Revision history Table 6: 01 Revision history CPCN Description Product specification; initial version Rev Date 20010713 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 10 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 08412 (c) Philips Electronics N.V. 2001 All rights reserved. Product data Rev. 01 -- 13 July 2001 11 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA72) 9397 750 08412 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 13 July 2001 12 of 13 Philips Semiconductors SI4800 N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 July 2001 Document order number: 9397 750 08412 |
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